PTL had installed a Plasma Immersion Ion Implantation PIII system in University of Science and Technology of China for their surface modification of materials research. The system has RF capacitive coupled plasma CCP discharge source to generate gaseous plasma and pulse filtered cathodic vacuum arc p-FCVA source to generate metallic plasma. Thus, the system can be used to conduct both gaseous and metallic ion implantation. The implantation voltage range is 10kV to 40kV.
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