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  Vacuum Systems >> Hybrid Ion Implantation and Deposition System >> Smart PVD and Implantation System

Smart PVD and Implantation System



Smart PVD and Implantation System has been equipped with 2 sets of pulse filtered cathodic vacuum arc P-FCVA sources, 2 sets of magnetron sputtering MS sources, 1 set of RF-CCP plasma source and 1 unit of high voltage pulse modulator HVPM for Plasma Immersion Ion Implantation PIII and thin film deposition. The P-FCVA sources are used for high ionization ion reactive deposition. The process can be pulse-to-pulse control of arc discharges to control the process. Besides, the P-FCVA can be synchronized operated with HVPM to perform metallic ion implantation. In additions, the RF-CCP is used to discharge gas plasma for either PECVD process, surface cleaning, activation or gas ion implantation and assisting P-FCVA for reactive ion implantation and deposition.  The MS sputtering sources have integrated with 1 set of DC power unit and 1 set of RF auto matching unit for confocal sputtering deposition. Thus, the system can be used to conduct multiple plasma surface processes such as ion implantation, PVD coating or PECVD process to suit for different research applications.

Some Main Specs:

l  F500mm x 500mm, stainless steel chamber, double-wall with water-cooling.

l  Top-lip opening by electrical motor control unit

l  1300L/s turbomolecular pump, 15L/s rotary pump, gate valve, foreline valve and roughing valve to form pumping system

l  1 set of ion gauge and 2 sets of pirani gauges with vacuum display to detect the vacuum pressure

l  The ultimate vacuum pressure can be reached below 5 x 10e-5 Pa

l  4 sets of MFC controllers with isolation valves for reactive gas feeding

l  2 sets of magnetron sputtering sources MS (2" target) with shutters and stretchable distance from sample stage.

l  2 sets of pulsed filtered cathodic metal arc sources P-FCVA for metallic plasma

l  1 sets of RF capacitance coupled plasma source RF-CCP for gaseous plasma

l  1 set of high voltage pulse modulator to conduct Plasma Immersion Ion Implantation PIII process which can be worked with RF-CCP source and P-FCVA sources

l  1 set of rotatory high-voltage HV sample stage with controllable rotation speed.

l  2 sets of rotatory low voltage LV sample stages with controllable rotation speed, stretchable distance from treatment sources, PID temperature control upto 500oC. One LV stage is face to the confocal plane of MS sources and the other one is face to the confocal plane of P-FCVA sources.




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